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An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet (UV) light source (such as from a mercury-vapor lamp). EPROMs are easily recognizable by the transparent fused quartz (or on later models resin) window on the top of the package, through which the silicon chip is visible, and which permits exposure to ultraviolet light during erasing.[2] It was invented by Dov Frohman in 1971.[3] Development of the EPROM memory cell started with investigation of faulty integrated circuits where the gate connections of transistors had broken. Stored charge on these isolated gates changes their threshold voltage.
Read moreAn EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet (UV) light source (such as from a mercury-vapor lamp). EPROMs are easily recognizable by the transparent fused quartz (or on later models resin) window on the top of the package, through which the silicon chip is visible, and which permits exposure to ultraviolet light during erasing.[2] It was invented by Dov Frohman in 1971.[3] Development of the EPROM memory cell started with investigation of faulty integrated circuits where the gate connections of transistors had broken. Stored charge on these isolated gates changes their threshold voltage.
